Method to obtain transparent image of resist contact hole or feature by SEM without deforming the feature by ion beam
US6683305B1 · kind B1 · utility
5Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Oct 18, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/2251
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and arrangement of obtaining a transparent image of a resist contact hole or feature provided on a silicon wafer through a scanning electron microscope (SEM), with an absence of deforming the feature, such as the contact hole. In particular, the method is directed to the obtaining of a transparent image of a resist contact hole or feature by SEM without damaging the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.