Trench IGBT

US6683331B2 · kind B2 · utility

Assignee

• International Rectifier Corporation · US

Inventors

• Richard Francis · Manhattan Beach, US
• Chiu Ng · El Segundo, US

Key dates

• Filing date: Apr 25, 2002
• Grant date: Jan 27, 2004
• Expiry date: Jul 9, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P− base region which is about 7 microns deep. A deep narrow N+ emitter diffusion is at the top of the trench and a shallow P+ contact diffusion extends between adjacent emitter diffusions. The N+ emitter diffusions are arranged to define a minimum RB′. The trenches are sufficiently deep to define long channel regions which can withstand a substantial portion of the blocking voltage of the device. A second blanket emitter implant and diffusion defines a shallow high concentration emitter diffusion extension at the top of the die for improved contact to the emitter diffusions.