True defect monitoring through repeating defect deletion
US6684164B1 · kind B1 · utility
3Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Aug 28, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of deleting repeating defects having no effect on product yield of a wafer so that true defects on the wafer are more readily found. A wafer having a plurality of dies thereon is provided. The wafer is scanned to find any repeating defects. If the repeating defects have no effect on the product yield, the area around the repeating defects is marked out as “don't care” region. Another wafer scanning operation to find the true defects is subsequently conducted by scanning the region outside the “don't care” region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.