Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process
US6686274B1 · kind B1 · utility
35Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2001 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Jun 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.