Shallow trench isolation planarization using self aligned isotropic etch

US6686283B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Shawn T. Walsh · Richardson, US
• John E. Campbell · Houston, US
• Somit Joshi · Dallas, US
• James B. Friedmann · Dallas, US
• Michael J. McGranaghan · Dallas, US
• Janice D. Makos · McKinney, US
• Arun Sivasothy · Dallas, US
• Troy A. Yocum · Plano, US
• Jaideep Mavoori · Bellevue, US
• Wayne Bather · Plano, US
• Joe G. Tran · Irving, US
• Ju-Ai Ruan · Plano, US
• Michelle L. Hartsell · Plano, US
• Gregory B. Shinn · Dallas, US

Key dates

• Filing date: Feb 4, 2000
• Grant date: Feb 3, 2004
• Expiry date: Feb 4, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31056
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming planar isolation structures for integrated circuits. A etch barrier is formed over the isolation fill material and an etch back is performed to remove material above unetched portions of the substrate. The exposed fill material is etched and planarized to form a planar isolation structure.