Cleaning agent and cleaning process using the same
US6686322B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 28, 2000 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Aug 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.