Low voltage complement ESD protection structures

US6690069B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Ann Concannon · San Jose, US
• Peter J. Hopper · San Jose, US
• Marcel ter Beek · Pleasanton, US

Key dates

• Filing date: Aug 2, 2002
• Grant date: Feb 10, 2004
• Expiry date: Aug 2, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

In an ESD protection device using a SCR-like structure, a vertical device is provided that is highly robust and easily allows the triggering voltage to be adjusted during manufacture. Furthermore it is implementable in complementary form based on PNP and NPN BJT structures, to provide both positive and negative pulse protection.