Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6692546B2 · kind B2 · utility
42Cited by
13References
39Claims
0Family size
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Key dates
| Filing date | Aug 17, 2001 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Aug 17, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.