Method of plasma heating and etching a substrate
US6692648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | May 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to the preheating of a substrate which includes a material which is to be pattern etched at a temperature in excess of 150° C. The method comprises exposing the substrate to a preheating plasma generated from a plasma source gas which includes a reactive gas that aids in the production of a sputtered/etched residue during the preheating which is more easily etched during a subsequent pattern etching step than the material which is being pattern etched. In another embodiment of the method, the reactive gas in the preheating plasma source gas is slightly reactive with the material which is to etched during the subsequent pattern etching step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.