Self-aligned conductive line for cross-point magnetic memory integrated circuits
US6692898B2 · kind B2 · utility
64Cited by
11References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2001 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Dec 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Method of forming a magnetic memory device are disclosed. In one embodiment, a first plurality of conductive lines are formed over a semiconductor workpiece. A plurality of magnetic material lines are formed over corresponding ones of the first plurality of conductive lines and a second plurality of conductive lines are formed over the semiconductor workpiece. The second plurality of conductive lines cross over the first conductive lines and the magnetic material lines. These second lines can be used as a mask to while the magnetic material lines are patterned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.