Patent · US Expired

Methods for marking a bare semiconductor die

US6692978B2 · kind B2 · utility

25Cited by
26References
84Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 6, 2002
Grant dateFeb 17, 2004
Priority date
Expiry dateMar 6, 2022

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/977
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multi-level laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electro-magnetic radiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.