Semiconductor-on-insulator circuit with multiple work functions
US6693333B1 · kind B1 · utility
167Cited by
13References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 2001 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | May 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
An integrated circuit can include gate structures designed to effect a work function of a transistor. A first set of gate structures can have a first work function and a second set of gate structures can have a second work function. The gate structures include metal layers to affect changes in the work function. The work function can affect the threshold voltage associated with the transistors. The transistor can be built on a silicon-on-insulator substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.