Electroless deposition of doped noble metals and noble metal alloys
US6693366B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Feb 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.