Method of manufacturing semiconductor device having trench filled up with gate electrode
US6696323B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
In a semiconductor device, a p-type base region is provided in an n−-type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+-type source region extends in the p-type base region from the principal surface in the perpendicular direction, and an n+-type drain region extends in the substrate separately from the p-type base region with a drift region interposed therebetween. A trench is formed to penetrate the p-type base region from the n+-type source region in a direction parallel to the principal surface. A gate electrode is formed in the trench through a gate insulating film. Accordingly, a channel region can be formed with a channel width in a depth direction of the trench when a voltage is applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.