Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film
US6696353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2003 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Mar 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench is formed by etching interlayer dielectric films to a predetermined depth along the perimeter of the integrated circuit chip to be adjacent to the edge of the integrated circuit chip and an anti-moisture-absorption film is formed to fill the trench or is formed on the sidewall of the trench to a predetermined thickness, in order to prevent moisture from seeping into the edge of the integrated circuit chip. Moisture is effectively prevented from seeping into the edge of the chip by forming the anti-moisture-absorption film at the edge of the chip using the conventional processes of manufacturing the integrated circuit chip without an additional process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.