Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
US6696362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2002 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Apr 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.