Titanium boronitride layer for high aspect ratio semiconductor devices
US6696368B2 · kind B2 · utility
12Cited by
20References
120Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2001 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Jul 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl4-based titanium nitride, and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.