Method for fabricating positionally exact surface-wide membrane masks

US6696371B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• IMS-Ionen Mikrofabrikationas Systeme · AT

Inventors

• Joerg Butschke · Stuttgart, DE
• Albrecht Ehrmann · Aalen, DE
• Ernst Haugeneder · Wien, AT
• Florian Letzkus · Bingen, DE
• Reinhard Springer · Sulz, DE

Key dates

• Filing date: Jun 5, 2002
• Grant date: Feb 24, 2004
• Expiry date: Jun 5, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/942
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.