Semiconductor device with diamond-like carbon layer as a polish-stop layer
US6696759B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 30, 2001 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate in a damascene process flow. The semiconductor structure includes a substrate having a dielectric layer followed by the diamond-like carbon layer on a surface thereof. The diamond-like carbon layer is used as a hard-mask for forming conductive metal features from grown substrate material that fills a plurality of openings in the substrate, therein forming a semiconductor island structure, The semiconductor structure has a planar surface at the diamond-like carbon layer and the grown substrate material, whereby the diamond-like carbon polish-stop layer allows for over-planarization of the semiconductor island structure to provide an improved planar surface having a sufficient decrease in topography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.