Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode
US6698082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2001 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Dec 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.