Manufacturing process for fast recovery diode
US6699775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2002 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two spaced silicon dioxide rings used in the definition of the two guard rings. A first metal ring overlies and contacts the outermost diffusion. A second metal ring which acts as a field plate contacts the second diffusion and overlaps the outermost oxide ring. A third metal ring, which acts as a field plate, is a continuous portion of the active area top contact and overlaps the second oxide ring. The termination is useful for high voltage (of the order of 1200 volt) devices. The rings are segments of a common aluminum or Palladium contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.