Wafer treating method for making adhesive dies
US6703075B1 · kind B1 · utility
14Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Dec 24, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Dec 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer treating method for making adhesive dies is provided. A liquid adhesive with two-stage property is coated on a surface of a wafer. Then, the wafer is pre-cured to make the liquid adhesive transform a thermo-bonding adhesive film having B-stage property which has a glass transition temperature not less than 40° C. for handling without adhesive under room temperature. After positioning the wafer, the wafer is singulated to form a plurality of dies with adhesive for die-to-die stacking, die-to-substrate or die-to-leadframe attaching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.