Passivated silicon carbide devices with low leakage current and method of fabricating
US6703276B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Jan 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments, with oxide passivation and edge termination at a face of the semiconductor substrate adjacent to and surrounding the power device. The edge termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize a portion of the substrate face and preferably self-aligned to the device. The passivated, edge-terminated devices exhibit improved characteristics relative to passivated devices with characteristics approaching those of the native semiconductor with the additional advantages of passivation protection. Methods for making and using the devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.