Patent · US Expired

Method of forming layers of oxide on a surface of a substrate

US6703278B2 · kind B2 · utility

3Cited by

16References

96Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Karsten Wieczorek · Dresden, DE
Falk Graetsch · Dresden, DE
Stephan Kruegel · Sankt Goar, DE

Key dates

Filing date	Jul 30, 2002
Grant date	Mar 9, 2004
Priority date	—
Expiry date	Jul 30, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/685
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a reduced number of masking steps compared to the conventional processing, wherein the thickness difference can be maintained within a range of some tenths of a nanometer. The method substantially eliminates any high temperature oxidations and is also compatible with most chemical vapor deposition techniques used for gate dielectric deposition in sophisticated semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.