Inventor · Dresden, DE

Falk Graetsch

9Patents

5h-index

13Co-inventors

56Inventor score

Filing activity: Apr 19, 2002 → Jul 22, 2011

Most-cited inventions

Patent	Title	Area	Cited by	Status
US6723663B1	Technique for forming an oxide/nitride layer stack by controlling the nitrogen ion concentration in a nitridation plasma	Electricity	16	Expired
US8445344B2	Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning	Electricity	15	Active
US7897450B2	Method for encapsulating a high-K gate stack by forming a liner at two different process temperatures	Electricity	7	Active
US6812159B2	Method of forming a low leakage dielectric layer providing an increased capacitive coupling	Electricity	6	Expired
US8283232B2	Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processing	Electricity	6	Active
US6875676B2	Methods for producing a highly doped electrode for a field effect transistor	Electricity	4	Expired
US6703278B2	Method of forming layers of oxide on a surface of a substrate	Electricity	3	Expired
US8951901B2	Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry	Electricity	1	Active
US6900111B2	Method of forming a thin oxide layer having improved reliability on a semiconductor surface	Emerging Cross-Sectional Technologies	0	Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.