Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates
US6703293B2 · kind B2 · utility
41Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Jul 11, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a Si1−XGeX film on a silicon substrate includes preparing a silicon substrate; epitaxially depositing a Si1−XGeX layer on the silicon substrate forming a Si1−XGeX/Si interface there between; amorphizing the Si1−XGeX layer at a temperature greater than Tc to form an amorphous, graded SiGe layer; and annealing the structure at a temperature of between about 650° C. to 1100° C. for between about ten seconds and sixty minutes to recrystallize the SiGe layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.