Method of removing inorganic gate antireflective coating after spacer formation
US6703297B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | May 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods of manufacturing are disclosed. In one aspect, a method of manufacturing is provided that includes forming an anti-reflective coating on a structure on a substrate. A first spacer and a second spacer are formed adjacent to the structure. The first spacer covers a first portion of the substrate and the second spacer covers a second portion of the substrate. The anti-reflective coating is removed while the first and second spacers are left in place to protect the first and second portions of the substrate. The method provides for anti-reflective coating application and removal with reduced risk of active region damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.