Method for producing a semiconductor configuration

US6703644B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Alfred Lell · Maxhütte-Haidhof, DE

Key dates

• Filing date: Mar 19, 1999
• Grant date: Mar 9, 2004
• Expiry date: Mar 19, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/14

Abstract

In a method for producing a semiconductor configuration that includes at least two semiconductor elements, at least two differently doped surface regions are embodied on the top side of a semiconductor substrate. After that, an active layer structure including a plurality of layers is constructed on each of the surface regions, and each layer structure is associated with one of the semiconductor elements. Whichever are the lowermost electrically conductive layers toward the substrate in the active layer structures are electrically separated from one another.