Layout for thermally selected cross-point MRAM cell
US6704220B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 3, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | May 3, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device (40) and method of manufacturing thereof including magnetic memory cells (14) having a second magnetic layer (20) including at least a first and second material (24/26). The Curie temperature of the second material (26) is lower than the Curie temperature of the first material (24). A plurality of non-continuous second conductive lines (22) are disposed over the magnetic memory cells (14). A current (28) may be run through the second conductive lines (22) to increase the temperature of the second material (26) to a temperature greater than the second material (26) Curie temperature, causing the second material (26) to lose its ferromagnetic properties, providing increased write selectivity to the memory array (40).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.