In situ wafer heat for reduced backside contamination
US6704913B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Nov 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing system and a computer-readable storage medium for directing operation of a substrate processing system are provided for preparing a substrate for processing. The substrate processing system has a chamber with a substrate receiving portion and systems equipped to implement plasma processes. The computer-readable storage medium has a program that directs operation of the systems. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.