Methods of fabricating silicon carbide crystals
US6706114B2 · kind B2 · utility
28Cited by
48References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 21, 2001 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Jun 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/911
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.