Method for forming multiple structures in a semiconductor device
US6706571B1 · kind B1 · utility
543Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Nov 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
A method of forming multiple structures in a semiconductor device includes depositing a film over a conductive layer, etching a trench in a portion of the film and forming adjacent the sidewalls of the trench. The film may then be etched, followed by an of the conductive layer to form the structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.