Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors
US6706644B2 · kind B2 · utility
5Cited by
7References
3Claims
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Key dates
| Filing date | Jul 26, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Jul 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.