Ferroelectric transistor

US6707082B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Haneder · Hersbruck, DE
• Harald Bachhofer · Hersbruck, DE
• Eugen Unger · Augsburg, DE

Key dates

• Filing date: Mar 28, 2002
• Grant date: Mar 16, 2004
• Expiry date: Mar 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/684

Abstract

In a ferroelectric transistor containing two source/drain zones with a channel region disposed there-between, a first dielectric intermediate layer containing Al2O3 is disposed on a surface of the channel region. A ferroelectric layer and a gate electrode are disposed above the first dielectric intermediate layer. The utilization of Al2O3 in the first dielectric intermediate layer results in the suppression of tunneling of compensation charges from the channel region into the first dielectric layer and thereby improves the time for data storage.