Hydrogen implant for buffer zone of punch-through non EPI IGBT
US6707111B2 · kind B2 · utility
19Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Aug 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IGBT is formed in a thin (less than 250 microns thick) float zone silicon wafer using a hydrogen implant to form an N+ buffer layer at the bottom of the wafer. A weak anode is formed on the bottom of the wafer. A single hydrogen implant, or a plurality of hydrogen implants of progressively shallower depth and increasing dose can be used to form the implant in a diffused float zone wafer. The process may also be used to form an N+ contact region in silicon to permit a good ohmic contact to the silicon for any type device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.