Fuse structure integrated wire bonding on the low k interconnect and method for making the same
US6707129B2 · kind B2 · utility
6Cited by
3References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Dec 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for using fuse structure integrated wire bonding on the substrate, and relates to methods for making the same are disclosed, in which an Al-fuse has an extra-etching process pattern by fuse-open mask and has been thinned down from Al-fuse thickness. The Al fuse structure integrated Al wire-bonding pad has two kind of thickness under fuse-open and for the other area. This invention makes the fuse easy to blow without suffering any bondability from wire bonding for packaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.