Magnetic memory with reduced write current
US6707711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2003 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Feb 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.