Plasma heating of a substrate with subsequent high temperature etching
US6709609B2 · kind B2 · utility
1Cited by
14References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.