Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds
US6709715B1 · kind B1 · utility
47Cited by
23References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1999 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Sep 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.