Purge heater design and process development for the improvement of low k film properties
US6709721B2 · kind B2 · utility
5Cited by
158References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Aug 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.