Process for reducing edge roughness in patterned photoresist
US6709807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Oct 9, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.