Method of manufacturing a metal cap layer for preventing damascene conductive lines from oxidation
US6709874B2 · kind B2 · utility
37Cited by
8References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Mar 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (100) having a copper damascene BEOL structure. A metal cap layer (120) is formed over conductive lines (118) to prevent oxidation of the conductive lines (118) during subsequent processing steps. The metal cap layer (120) comprises a material other than the conductive line (118) material that is resistant to oxidation. The structure (100) is particularly beneficial for MRAM devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.