Fully relaxed channel HEMT device

US6710379B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN CORPORATION · US

Inventors

• Michael Wojtowicz · Long Beach, US
• Tsung-Pei Chin · Gardena, US
• Michael E. Barsky · West Hollywood, US
• Ronald W. Grundbacher · Hermosa Beach, US

Key dates

• Filing date: Feb 4, 2003
• Grant date: Mar 23, 2004
• Expiry date: Feb 4, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A HEMT device comprises a buffer layer disposed over a substrate. A partially-relaxed channel is disposed over the buffer layer and a barrier layer is disposed over the channel. A cap layer is disposed over the barrier layer and a gate is positioned on the barrier layer. A source and a drain are positioned on the barrier layer on opposite sides of the gate.