Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
US6713127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Dec 28, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.