Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC
US6713359B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2000 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | May 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.