Patent · US Expired

Method for forming an insulator having a low dielectric constant on a semiconductor substrate

US6713364B2 · kind B2 · utility

2Cited by

7References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventor

Markus Kirchhoff · Radeberg, DE

Key dates

Filing date	Jul 27, 2001
Grant date	Mar 30, 2004
Priority date	—
Expiry date	Oct 21, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/1047
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating an insulator on a semiconductor substrate such that the insulator has a low dielectric constant. A first interconnect and a second interconnect are configured on a semiconductor substrate. A conductive silicon is formed between the first interconnect and the second interconnect. The conductive silicon is anodically etched in a hydrofluoric-acid-containing electrolyte to convert the conductive silicon into porous silicon. The porous silicon is subsequently oxidized to form porous silicon oxide. With a dielectric constant of between 1.1 and 4, the porous silicon oxide has a lower dielectric constant than customary silicon oxide with 4.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.