Barrier layer deposition using HDP-CVD
US6713390B2 · kind B2 · utility
36Cited by
57References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 12, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jul 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.