Method of depositing an optical quality silica film by PECVD
US6716476B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2001 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Feb 27, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12169
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predetermined level. The deposited film is then subjected to a post deposition heat treatment at a temperature selected to optimize the mechanical properties without affecting the optical properties. Finally, the observed FTIR characteristics of the deposited film are monitored to produce a film having the desired optical and mechanical properties. This technique permits the production of high quality optical films with reduced stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.