MFMOS capacitors with high dielectric constant materials

US6716645B2 · kind B2 · utility

Assignee

• Sharp Laboratories of America, Inc. · US

Inventors

• Tingkai Li · Vancouver, US
• Sheng Teng Hsu · Camas, US
• Hong Ying · Cupertino, US
• Bruce D. Ulrich · Beaverton, US
• Yanjun Ma · Bellevue, US

Key dates

• Filing date: Dec 12, 2002
• Grant date: Apr 6, 2004
• Expiry date: Dec 12, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/689

Abstract

A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO2, HfO2, Y2O3, or La2O3, or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.