FET having epitaxial silicon growth
US6716687B2 · kind B2 · utility
30Cited by
8References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Feb 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Field-effect transistors, and methods of their fabrication, having channel regions formed separately from their source/drain regions and having monocrystalline material interposed between the channel regions and the source/drain regions. The monocrystalline material includes monocrystalline silicon and silicon-germanium alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.